submit news    HOME | FEEDBACK  


« NAVIGATION »
NEWS

- Bio/Medicine

- Chemicals

- Defense

- Drug Delivery

- Education

- Electronics

- Energy

- Events

- Grants

- Industry

- Investment

- Litigation

- Materials

- MEMS

- Nanofabrication

- Nanoparticles

- Nanotubes

- Optics

- Partnership

- Patent

- Products

- Quantum dots

- Research

- Smart Dust

- Software
COMPANIES
EVENTS

- Browse by Month

- Current Shows

- Previous Shows

- Submit Events
FEEDBACK
ADVERTISE
LINK TO US

« PARTNERS »
Become A Nanotechwire Partner

FEI Company

Veeco Instruments

Nano Science and Technology Institute

National Nanotechnology Initiative

Nanotechnology at Zyvex

Want to see your Company or Organization listed above? Become A Nanotechwire Partner Today - click here
« NEWSLETTER »



« SEARCH »







4/21/2011 12:43:04 PM
Intel, Micron Extend NAND Flash Technology Leadership, Introduce Industry’s Smallest, Most Advanced 20-Nanometer Process

Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm2 and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies’ existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.

Manufactured by IM Flash Technologies (IMFT), Intel and Micron’s NAND flash joint venture, the new 20nm 8GB device is a breakthrough in NAND process and technology design, further extending the companies’ lithography leadership. Shrinking NAND lithography to this technology node is the most cost-effective method for increasing fab output, as it provides approximately 50 percent more gigabyte capacity from these factories when compared to current technology. The new 20nm process maintains similar performance and endurance as the previous generation 25nm NAND technology.

“Close customer collaboration is one of Micron’s core values and through these efforts we are constantly uncovering compelling end-product design opportunities for NAND flash storage,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our innovation and growth opportunities continue with the 20nm NAND process, enabling Micron to deliver cost-effective, value-added solid-state storage solutions for our customers.”

“Our goal is to enable instant, affordable access to the world’s information,” said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group. “Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies.”

The 20nm, 8GB device is sampling now and expected to enter mass production in the second half of 2011. At that time, Intel and Micron also expect to unveil samples of a 16GB device, creating up to 128GBs of capacity in a single solid-state storage solution that is smaller than a U.S. postage stamp.

Micron

Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as well as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology Inc., visit http://www.micron.com.

Intel

Intel (NASDAQ: INTC) is a world leader in computing innovation. The company designs and builds the essential technologies that serve as the foundation for the world’s computing devices. http://www.intel.com

Other Headlines from Intel ...
 - Intel, Micron Extend NAND Flash Technology Leadership, Introduce Industry’s Smallest, Most Advanced 20-Nanometer Process
 - Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on Industry-Leading 25-Nanometer Silicon Process Technology
 - Intel, imec and Five Flemish Universities Open Flanders ExaScience Lab
 - Carnegie Mellon and Intel Collaborate To Improve Energy Costs and Efficiency in Chip Making
 - Moore’s Law Marches on at Intel

Other Headlines from Micron Technology, Inc. ...
 - Intel, Micron Extend NAND Flash Technology Leadership, Introduce Industry’s Smallest, Most Advanced 20-Nanometer Process
 - Micron Wins Prestigious Semiconductor Insight Awards for DRAM and NAND Flash Technology Innovations
 - Micron Collaborates with Sun Microsystems to Extend Lifespan of Flash-Based Storage, Achieves One Million Write Cycles

More Industry Headlines ...
 - UCF Researcher Gets Global Attention, Cash
 - Scott Gish joins Cambridge NanoTech Executive Team
 - Ultratech Announces HB-LED Asia Technology Center in Taiwan
 - Luna Innovations Reports First Quarter 2011 Financial Results
 - CVD Equipment Corporation Announces Record Q1 Results


« Back To List »

« GET LISTED »
- submit company
- submit news
- submit events
- advertise here

« EVENTS »
- More Events


Copyright © 2017 Nanotechwire.com | Privacy Policy |