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3/24/2004 8:18:18 AM
NVE Corporation Provides MRAM Update (memory fabricated using nanotechnology)

NVE Corporation is providing the following update on the status of its MRAM partnerships.

  • Cypress Semiconductor has made working MRAM using NVE intellectual property. Ralph Schmitt, Cypress Semiconductor's Executive Vice President of Sales and Marketing, said "we feel very confident that we are close to having a production-ready product." Under a technology exchange agreement, NVE has rights to Cypress Semiconductor's MRAM designs, rights to modify such designs, and rights to have MRAM manufactured at Cypress Semiconductor's foundry.
  • Motorola, Inc. has said it expects to begin MRAM production by late 2004. NVE believes that the MRAMs Motorola has described publicly contain NVE's intellectual property. NVE expects to receive royalties if Motorola's production devices contain NVE's intellectual property.
  • NVE plans to further monetize its MRAM intellectual property with additional license agreements.

For more information, NVE maintains Frequently Asked Questions in the investor section of its web site (http://www.nve.com).

MRAM is a revolutionary memory fabricated using nanotechnology which uses electron spin to encode data. MRAM has been called the "holy grail" of memory because it has the potential to combine the speed of SRAM, the density of DRAM, and the non-volatility of flash.

NVE is a leader in the practical commercialization of spintronics, a nanotechnology which many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products including sensors and couplers to revolutionize data sensing and transmission.

Other Headlines from NVE ...
 - NVE Corporation Reports Fourth Quarter and Fiscal Year Results
 - NVE Corporation Reports Second Quarter Results
 - NVE Corporation Reports First Quarter Results
 - NVE Notified of Two Patent Grants Relating To Spintronics
 - NVE Corporation Reports Fourth Quarter and Fiscal Year Results

More Electronics Headlines ...
 - Silicon oxide circuits break barrier
 - Spintronics breakthrough documented by UNL MRSEC team
 - Intel, Micron First to Sample 3-Bit-Per-Cell NAND Flash Memory on Industry-Leading 25-Nanometer Silicon Process Technology
 - Researchers Control Collective Spin States Electrically at Room Temperature
 - Semiconductor Research Corporation and Georgia Tech Boost Off-chip Bandwidth While Driving Down Energy Per Bit


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